Power Semiconductor Modules

IGBT / Hybrid / SiC - from Leapers and BASiC

Wuxi Leapers Semiconductor Co, Ltd (Leapers) was jointly founded in 2019 in Wuxi, China by a number of Chinese and Japanese R&D experts, each with over 30 years of experience in the field of power semiconductors. Leapers develops and manufactures in parallel at its two sites in Japan and China. Leapers is dedicated to high-end IGBT and SiC power modules and acts as a power electronics partner specializing in the design and manufacturing of power modules. Leapers combines the highest level of expertise in design with a flexible selection of electronic components, also according to customer requirements – the focus here is on module robustness, innovative material selection and a product price in line with the market.

BECK and Leapers have been working very closely and successfully together since the beginning of 2023 with the aim of providing our customers with alternative solutions to existing manufacturers in order to enable a higher degree of flexibility and to secure the supply of power semiconductor modules.


BASiC Semiconductor Ltd (BASiC) is an innovative Chinese company headquartered in Shenzhen. BASiC was founded in 2016 as a highly specialized company focusing on the development, design and production of SiC power semiconductors and the associated gate driver ICs. In the course of the company's further development, additional development centers were established in Beijing, Shanghai, Nanjing and Japan (Nagoya) in addition to the two production sites in Shenzhen and Wuxi. A key special feature of BASiC is that the chips for the discrete SiC power semiconductors come from the company's own 6” SiC wafer production – BASiC is therefore not dependent on external chip manufacturers and can act independently and flexibly. 

Since mid-2023, BECK and BASiC have been pursuing the common goal of offering our customers a stable and reliable alternative source for SiC power semiconductors, thus securing the supply situation and exploiting further growth potential.