Wide Bandgap Semiconductors

SiC Schottky Diode

Leshan Radio Company (LRC) was founded in 1970 in Leshan City south of Chengdu in Sichuan Province in China. The company started with Axial Leaded Diodes and Bridge Rectifiers in the beginning – in 1995 LRC and Motorola (now: OnSemi) set up a joint venture called Leshan Phoenix Semiconductor (LPS) for producing Small Signal Diodes. 2011 LRC expanded their own production capacity by setting up a new factory in Chengdu: Advanced Power Semiconductor (APS). Combined with the share of the joint venture with OnSemi, LRC achieves an overall production capacity of more than 1.000.000.000 (one billion) Small Signal Diodes / week (!), allowing LRC to join the ranks of the TOP 5 manufacturers in terms of production capacity worldwide.

While having obtained all required certifications like ISO 9001 and IATF16949 for their facilities, LRC can offer a vast variety of products to meet European requirements for Industry and Automotive products (AECQ 101).

LRC’s product portfolio ranges from Small Signal Devices such as Small Signal SchottkySmall Signal MOSFETs over various Power devices such as Power SchottkyPower TVS DiodePower MOSFETs etc. combined with general and state-of-the art packages.

Moreover, an interesting set-up of Integrated Circuits (ICs) is currently under development within the continuously growing portfolio of this powerful partner of BECK ELEKTRONIK.

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (SI) and carbon (C).

SiC has many advantages in comparision to Si:

  1. SiC has ten times the dieletric breakdown field strength of Si
  2. SiC has three times the bandgap of Si
  3. SiC has three times the thermal conductivity of Si

These advantages make SiC devices far exceed the performance of their Si counterpartes with higher breakdown voltage, lower resistivity and higher operation temperature.

PANJIT offers SiC Schottky Diode from 650V to 1200V Breakdown Voltage and from 2A to 11A forward current.

Based on SiC and packaging technology PANJIT's SiC Schokkty Diodes have following features:

  • Temperature Independent fast Switching Behavior
  • Low Conduction and Switching Loss (less noise)
  • High Surge Current Capability
  • Positive Temperature Coefficient on Vf ( avoid thermal run away when used in parallel )
  • Fast Reverse Recovery
  • 175°C Maximum Operating Junction Temperature

Product overview of SiC Schottky Diodes of our partner PANJIT (AEC-Q available)

The abbreviation JSCJ stands for Jiangsu Changjing Electronics Co., Ltd, a strongly emerging young company located in the city of Nanjing in Jiangsu province, China. JSCJ is the offspring of JCET, one of TOP3 of World’s biggest OSAT (Outsourced Semiconductor Assembly & Test) companies and dedicated (with this powerful background) to become one of the leading players in its market for semiconductor products.

JSCJ is offering a huge variety of products to address markets in the Industry, Consumer and Whitegoods sector and is furthermore continuously advancing into Automotive applications is focusing diodestransistorsfrequency devices (Crystal and Oscillator) and ICs with an ever-growing product portfolio. JCET, not only serves its own brand “JSCJ” but also many international semiconductors companies as ODM partner, has industry leading quality standards and carries certificates like ISO9001, ISO14001, OHSAS18001 and IATF16949.

JSCJ and BECK ELEKTRONIK cooperate from the very early stage of the founding of the brand “JSCJ” in 2019.

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (SI) and carbon (C).

SiC has many advantages in comparision to Si:

  1. SiC has ten times the dieletric breakdown field strength of Si
  2. SiC has three times the bandgap of Si
  3. SiC has three times the thermal conductivity of Si

These advantages make SiC devices far exceed the performance of their Si counterpartes with higher breakdown voltage, lower resistivity and higher operation temperature.

JSCJ offers currently 650V, 10A SiC Schottky Diodes in TO Package, more variante are in developing.

Based on SiC and packaging technology JSCJ's SiC Schottky Diodes have following features:

  • Temperature Independent fast Switching Behavior
  • Low Conduction and Switching Loss (less noise)
  • High Surge Current Capability
  • Positive Temperature Coefficient on Vf ( avoid thermal run away when used in parallel )
  • Fast Reverse Recovery
  • 175°C Maximum Operating Junction Temperature

For more product and order information please feel free to contact us.